SILICON MULTI-EPITAXIAL
NPN TRANSISTOR
2N6277
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High VCEO.
High DC Current Gain, hFE.
Low Collector-Emitter Saturation Voltage, VCE(sat).
Fast Switching.
Hermetic TO3 Metal package.
Ideally suited for Power Amplifier and Switching Applications.
Screening Options Available
ABSOLUTE MAXIMUM RATINGS
(TC = 25°C unless otherwise stated)
VCBO
VCEO
VEBO
IC
ICM
IB
PD
TJ
Tstg
Collector – Base Voltage
Collector – Emitter Voltage
Emitter – Base Voltage
Continuous Collector Current
Peak Collector Current
Base Current
TC = 25°C
Total Power Dissipation at
Derate Above 25°C
Junction Temperature Range
Storage Temperature Range
180V
150V
6V
50A
100A
20A
250W
1.43W/°C
-65 to +200°C
-65 to +200°C
THERMAL PROPERTIES
Symbols
R
θJC
Parameters
Thermal Resistance, Junction To Case
Min.
Typ.
Max.
0.7
Units
°C/W
Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.
Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However
Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to
verify that datasheets are current before placing orders.
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email:
sales@semelab-tt.com
Document Number 8537
Issue 1
Page 1 of 3
Website:
http://www.semelab-tt.com
SEME-LAB [ SEME LAB ]
