2N6300
2N6301
MECHANICAL DATA
Dimensions in mm (inches)
DARLINGTON SILICON
POWER TRANSISTORS
6.35 (0.250)
8.64 (0.340)
3.68
(0.145) rad.
max.
3.61 (0.142)
4.08(0.161)
rad.
14.48 (0.570)
14.99 (0.590)
11.94 (0.470)
12.70 (0.500)
24.13 (0.95)
24.63 (0.97)
1
2
0.71 (0.028)
0.86 (0.034)
Designed for general purpose
amplifier and low frequency
switching applications.
FEATURES
• High DC Current Gain
4.83 (0.190)
5.33 (0.210)
9.14 (0.360)
min.
1.27 (0.050)
1.91 (0.750)
• Monolithic Construction with Built-in
Base–Emitter Shunt Resistors
TO–66 (TO-213AA)
Pin 1 –Base
Pin 2 –Emitter
Case – Collector
ABSOLUTE MAXIMUM RATINGS
(Tc = 25°C unless otherwise stated)
2N6300
V
CEO
V
CBO
V
EBO
I
C
I
B
P
D
T
STG
, T
J
T
θJC
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current
60V
60V
Continuous
Peak
5V
8A
16A
120mA
2N6301
80V
80V
Base Current
Total Dissipation @ T
C
= 25°C
Derate above 25°C
Operating and Storage Junction Temperature Range
Thermal Resistance – Junction - Case
100W
75W
0.571W/°C
0.428W/°C
–65 to +200°C
1.75°C/W
2.33°C/W
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Document Number 3979
Issue 1