2N2222A
Data Sheet
ELECTRICAL CHARACTERISTICS
characteristics specified at TA = 25°C
Off Characteristics
Parameter
Symbol
V(BR)CEO IC = 10 mA
Test Conditions
Min
50
Typ
Max
Units
Volts
Collector-Emitter Breakdown Voltage
Collector-Base Cutoff Current
Collector-Base Cutoff Current
Collector-Base Cutoff Current
Collector-Emitter Cutoff Current
Emitter-Base Cutoff Current
Emitter-Base Cutoff Current
µA
nA
µA
nA
µA
nA
ICBO1
ICBO2
ICBO3
ICES
VCB = 75 Volts
10
10
10
50
10
10
VCB = 60 Volts
VCB = 60 Volts, TA = 150OC
VCE = 50 Volts
IEBO1
IEBO2
VEB = 6 Volts
VEB = 4 Volts
Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤ 2.0%
On Characteristics
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
hFE1
hFE2
hFE3
hFE4
hFE5
hFE6
IC = 0.1 mA, VCE = 10 Volts
IC = 1.0 mA, VCE = 10 Volts
IC = 10 mA, VCE = 10 Volts
IC = 150 mA, VCE = 10 Volts
IC = 500 mA, VCE = 10 Volts
IC = 10 mA, VCE = 10 Volts,
TA = -55OC
50
75
325
300
100
100
30
DC Current Gain
35
VBEsat1
VBEsat2
VCEsat1
VCEsat2
IC = 150 mA, IB = 15 mA
IC = 500 mA, IB = 50 mA
IC = 150 mA, IB = 15 mA
IC = 500 mA, IB = 50 mA
0.6
1.2
2.0
0.3
1.0
Base-Emitter Saturation Voltage
Volts
Volts
Collector-Emitter Saturation Voltage
Dynamic Characteristics
Parameter
Magnitude – Common Emitter, Short
Circuit Forward Current Transfer Ratio
Small Signal Short Circuit Forward
Current Transfer Ratio
Symbol
Test Conditions
Min
Typ
Max
Units
VCE = 20 Volts, IC = 20 mA,
|hFE|
2.5
f = 100 MHz
CE = 10 Volts, IC = 1 mA,
f = 1 kHz
CB = 10 Volts, IE = 0 mA,
100 kHZ < f < 1 MHz
EB = 0.5 Volts, IC = 0 mA,
100 kHZ < f < 1 MHz
V
hFE
50
V
pF
pF
Open Circuit Output Capacitance
COBO
CIBO
8
V
Open Circuit Input Capacitance
25
Switching Characteristics
Saturated Turn-Off Time
Saturated Turn-On Time
ns
ns
toff
ton
300
35
Semicoa Semiconductors, Inc.
Copyright 2002
Rev. N
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
Page 2 of 2
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