2N3507
Silicon NPN Transistor
Data Sheet
ELECTRICAL CHARACTERISTICS
Off Characteristics
characteristics specified at TA = 25°C
Parameter
Symbol
V(BR)CBO
V(BR)CEO IC = 10 mA
Test Conditions
Min
80
50
5
Typ
Max
Units
Volts
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
IC = 100 µA
Volts
Volts
µA
V(BR)EBO
ICEX1
IE = 10 µA
Collector-Emitter Cutoff Current
Collector-Emitter Cutoff Current
VCE = 60 Volts, VEB = 4 Volts
1
VCE = 60 Volts, VEB = 4 Volts,
TA = 150°C
mA
ICEX2
1.5
Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤ 2.0%
On Characteristics
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
IC = 500 mA, VCE = 1 Volts
IC = 1.5 A, VCE = 2 Volts
IC = 2.5 A, VCE = 3 Volts
IC = 3.0 A, VCE = 5 Volts
IC = 500 mA, VCE = 1 Volts
TA = -55°C
IC = 500 mA, IB = 50 mA
IC = 1.5 A, IB = 150 mA
IC = 2.5 A, IB = 250 mA
IC = 500 mA, IB = 50 mA
IC = 1.5 A, IB = 150 mA
IC = 2.5 A, IB = 250 mA
hFE1
hFE2
hFE3
hFE4
hFE5
35
30
25
20
17
175
150
DC Current Gain
VBEsat1
VBEsat2
VBEsat3
VCEsat1
VCEsat2
VCEsat3
1.0
1.3
2.0
0.5
1.0
1.5
Volts
Volts
Base-Emitter Saturation Voltage
0.8
Collector-Emitter Saturation Voltage
Dynamic Characteristics
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
Magnitude – Common Emitter, Short
Circuit Forward Current Transfer Ratio
VCE = 5 Volts, IC = 100 mA,
f = 20 MHz
|hFE|
3
15
VCB = 10 Volts, IE = 0 mA,
100 kHZ < f < 1 MHz
VEB = 3 Volts, IC = 0 mA,
100 kHZ < f < 1 MHz
pF
pF
Open Circuit Output Capacitance
Open Circuit Input Capacitance
COBO
CIBO
40
300
ns
ns
Delay Time
Rise Time
td
tr
IC = 1.5 A, IB1 = 150 mA
IC = 1.5 A, IB1 = 150 mA
15
30
Switching Characteristics
Storage Time
ns
ns
ts
tf
IC = 1.5 A, IB1=IB2 = 150 mA
IC = 1.5 A, IB1=IB2 = 150 mA
55
35
Fall Time
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