2N3997
Silicon NPN Transistor
Data Sheet
ELECTRICAL CHARACTERISTICS
characteristics specified at T
A
= 25°C
Off Characteristics
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector-Emitter Cutoff Current
Collector-Emitter Cutoff Current
Emitter-Base Cutoff Current
On Characteristics
Parameter
Symbol
h
FE1
h
FE2
h
FE3
h
FE4
V
BEsat1
V
BEsat2
V
CEsat1
V
CEsat2
Symbol
|h
FE
|
C
OBO
Test Conditions
I
C
= 50 mA, V
CE
= 2 Volts
I
C
= 1 A, V
CE
= 2 Volts
I
C
= 5 A, V
CE
= 5 Volts
I
C
= 1 A, V
CE
= 2 Volts
T
A
= -55°C
I
C
= 1 A, I
B
= 100 mA
I
C
= 5 A, I
B
= 500 mA
I
C
= 1 A, I
B
= 100 mA
I
C
= 5 A, I
B
= 500 mA
Test Conditions
V
CE
= 5 Volts, I
C
= 1 A,
f = 10 MHz
V
CB
= 10 Volts, I
E
= 0 mA,
100 kHZ < f < 1 MHz
Test Conditions
Symbol
V
(BR)CBO
V
(BR)CEO
I
CEO
I
CES1
I
CES1
I
EBO1
I
EBO2
Test Conditions
I
C
= 10
µA
I
C
= 50 mA
V
CE
= 60 Volts
V
CE
= 80 Volts
V
CE
= 80 Volts, T
A
= 150°C
V
EB
= 5 Volts
V
EB
= 8 Volts
Min
100
80
10
200
50
200
10
Typ
Max
Units
Volts
Volts
µA
nA
µA
nA
µA
Pulse Test: Pulse Width = 300
µs,
Duty Cycle
≤
2.0%
DC Current Gain
Min
60
80
20
20
0.6
Typ
Max
240
Units
Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Dynamic Characteristics
Parameter
Magnitude – Common Emitter, Short
Circuit Forward Current Transfer Ratio
Open Circuit Output Capacitance
Switching Characteristics
Parameter
Delay Time
Rise Time
Storage Time
Fall Time
Saturated Turn-On Time
Saturated Turn-Off Time
1.2
1.6
0.25
2
Typ
Max
12
150
Volts
Volts
Min
3
Units
pF
Symbol
t
d
t
r
t
s
t
f
t
ON
t
OFF
Min
Typ
Max
100
240
1.75
300
300
2.0
Units
ns
ns
µs
ns
ns
µs
Copyright 2002
Rev. D
Semicoa Semiconductors, Inc.
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
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