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HFP5N65S 参数 Datasheet PDF下载

HFP5N65S图片预览
型号: HFP5N65S
PDF下载: 下载PDF文件 查看货源
内容描述: 650V N沟道MOSFET [650V N-Channel MOSFET]
分类和应用:
文件页数/大小: 8 页 / 890 K
品牌: SEMIHOW [ SEMIHOW CO.,LTD. ]
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HFP5N65S
Electrical Characteristics
T
C
=25
°C
Symbol
Parameter
unless otherwise specified
Test Conditions
Min
Typ
Max
Units
On Characteristics
V
GS
R
DS(ON)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
V
DS
= V
GS
, I
D
= 250
V
GS
= 10 V, I
D
= 2.1 A
2.5
--
--
2.3
4.5
2.9
V
Off Characteristics
BV
DSS
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= 250
I
D
= 250
㎂, Referenced to25℃
V
DS
= 650 V, V
GS
= 0 V
V
DS
= 520 V, T
C
= 125℃
V
GS
= 30 V, V
DS
= 0 V
V
GS
= -30 V, V
DS
= 0 V
650
--
--
--
--
--
--
0.6
--
--
--
--
--
--
1
10
100
-100
V
V/℃
ΔBV
DSS
Breakdown Voltage Temperature
Coefficient
/ΔT
J
I
DSS
I
GSSF
I
GSSR
Zero Gate Voltage Drain Current
Gate-Body Leakage Current,
Forward
Gate-Body Leakage Current,
Reverse
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
DS
= 25 V, V
GS
= 0 V,
f = 1.0 MHz
--
--
--
520
60
8.0
680
80
10.5
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Turn-On Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
(Note 4,5)
V
DS
= 325 V, I
D
= 4.2 A,
R
G
= 25
--
--
--
--
--
--
--
11
45
40
48
10.5
2.5
4.0
33
90
88
100
13.5
--
--
nC
nC
nC
V
DS
= 520V, I
D
= 4.2 A,
V
GS
= 10 V
(Note 4,5)
Source-Drain Diode Maximum Ratings and Characteristics
I
S
I
SM
V
SD
trr
Qrr
Continuous Source-Drain Diode Forward Current
Pulsed Source-Drain Diode Forward Current
Source-Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
I
S
= 4.2 A, V
GS
= 0 V
I
S
= 4.2 A, V
GS
= 0 V
di
F
/dt = 100 A/μs
(Note 4)
--
--
--
--
--
--
--
--
300
2.2
4.2
16.8
1.4
--
--
A
V
μC
Notes ;
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L=18.9mH, I
AS
=4.2A, V
DD
=50V, R
G
=25Ω, Starting T
J
=25°C
3. I
SD
≤4.2A, di/dt≤200A/μs, V
DD
≤BV
DSS
, Starting T
J
=25
°C
4. Pulse Test : Pulse Width
≤ 300μs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature
SEMIHOW REV.A0,Oct 2009