SKCD 31 C 120 I3
Absolute Maximum Ratings
Symbol
V
RRM
I
F(AV)
I
FSM
T
jmax
Conditions
T
j
= 25 °C, I
R
= 0.1 mA
T
s
= 80 °C, T
j
= 150 °C
10 ms
sin 180°
T
j
= 25 °C
T
j
= 150 °C
Values
1200
30
410
350
150
Unit
V
A
A
A
°C
CAL-DIODE
I
F
= 40 A
V
RRM
= 1200 V
Size: 5,6 mm x 5,6 mm
SKCD 31 C 120 I3
Electrical Characteristics
Symbol
i
2
t
I
R
V
F
V
(TO)
r
T
Conditions
T
j
= 150 °C, 10 ms, sin 180°
T
j
= 25 °C, V
RRM
= 1200 V
T
j
= 125 °C, V
RRM
= 1200 V
T
j
= 25 °C, I
F
= 35 A
T
j
= 125 °C, I
F
= 35 A
T
j
= 125 °C
T
j
= 125 °C
min.
typ.
max.
613
0.10
4.00
Unit
A
2
s
mA
mA
V
V
V
mΩ
2.00
1.79
1.18
17.8
2.50
2.30
Features
• low forward voltage drop combined
with a low temperature dependence
• easy paralleling due to a small forward
voltage spread
• very soft recovery behavior
• small switching losses
• high ruggedness
• compatible to thick wire bonding
• compatible to all standard solder
processes
Dynamic Characteristics
Symbol
t
rr
t
rr
Q
rr
Q
rr
I
rrm
I
rrm
Conditions
T
j
= 25 °C, 25 A, 600 V, 500 A/µs
T
j
= 125 °C, 25 A, 600 V, 500 A/µs
T
j
= 25 °C, 25 A, 600 V, 500 A/µs
T
j
= 125 °C, 25 A, 600 V, 500 A/µs
T
j
= 25 °C, 25 A, 600 V, 500 A/µs
T
j
= 125 °C, 25 A, 600 V, 500 A/µs
min.
typ.
max.
Unit
µs
ns
2
4.5
25
µC
µC
A
A
Typical Applications*
• freewheeling diode for IGBT
• particularly suitable for frequencies
>
8
kHz
Thermal Characteristics
Symbol
T
j
T
stg
T
solder
T
solder
R
th(j-s)
10 min.
5 min.
sold. on 0,38 mm DCB, reference point
on copper heatsink close to the chip
1
Conditions
min.
-40
-40
typ.
max.
150
150
250
320
Unit
°C
°C
°C
°C
K/W
Mechanical Characteristics
Symbol
Raster
size
Area total
Anode
Cathode
Wire bond
Package
Chips /
Package
Conditions
Values
5.6 x 5.6
31.36
bondable (Al)
solderable (Ag/Ni)
Al, diameter
≤
500 µm
wafer frame
314 (5" Wafer)
Unit
mm
2
mm
2
pcs
SKCD
© by SEMIKRON
Rev. 0 – 18.02.2010
1
SEMIKRON [ SEMIKRON INTERNATIONAL ]
