SKM200GB12V
Absolute Maximum Ratings
Symbol
IGBT
V
CES
I
C
I
Cnom
I
CRM
I
CRM
= 3xI
Cnom
V
CC
= 720 V
V
GE
≤
20 V
V
CES
≤
1200 V
T
j
= 25 °C
T
j
= 175 °C
T
c
= 25 °C
T
c
= 80 °C
1200
311
237
200
600
-20 ... 20
T
j
= 125 °C
10
-40 ... 175
T
c
= 25 °C
T
c
= 80 °C
229
172
200
I
FRM
= 3xI
Fnom
t
p
= 10 ms, sin 180°, T
j
= 25 °C
600
990
-40 ... 175
T
terminal
= 80 °C
AC sinus 50Hz, t = 1 min
500
-40 ... 125
4000
V
A
A
A
A
V
µs
°C
A
A
A
A
A
°C
A
°C
V
Conditions
Values
Unit
SEMITRANS 3
®
V
GES
t
psc
T
j
I
F
I
Fnom
Inverse diode
SKM200GB12V
Features
• V-IGBT = 6. Generation Trench V-IGBT
(Fuji)
• CAL4 = Soft switching 4. Generation
CAL-diode
• Isolated copper baseplate using DBC
technology (Direct Copper Bonding)
• UL recognized, file no. E63532
• Increased power cycling capability
• With integrated gate resistor
• Low switching losses at high di/dt
T
j
= 175 °C
I
FRM
I
FSM
T
j
Module
I
t(RMS)
T
stg
V
isol
Characteristics
Symbol
IGBT
V
CE(sat)
V
CE0
r
CE
V
GE(th)
I
CES
C
ies
C
oes
C
res
Q
G
R
Gint
t
d(on)
t
r
E
on
t
d(off)
t
f
E
off
R
th(j-c)
Typical Applications*
• AC inverter drives
• UPS
• Electronic welders
Conditions
I
C
= 200 A
V
GE
= 15 V
chiplevel
T
j
= 25 °C
T
j
= 150 °C
T
j
= 25 °C
T
j
= 150 °C
V
GE
= 15 V
V
GE
=V
CE
, I
C
= 8 mA
V
GE
= 0 V
V
CE
= 1200 V
V
CE
= 25 V
V
GE
= 0 V
V
GE
= - 8 V...+ 15 V
V
CC
= 600 V
I
C
= 200 A
V
GE
= ±15 V
R
G on
= 3
R
G off
= 3
di/dt
on
= 7000 A/µs
di/dt
off
= 2300 A/µs
du/dt
off
= 6900 V/
µs
per IGBT
T
j
= 150 °C
T
j
= 150 °C
T
j
= 150 °C
T
j
= 150 °C
T
j
= 150 °C
T
j
= 150 °C
T
j
= 25 °C
T
j
= 150 °C
f = 1 MHz
f = 1 MHz
f = 1 MHz
T
j
= 25 °C
T
j
= 150 °C
min.
typ.
1.75
2.20
0.94
0.88
4.05
6.60
max.
2.20
2.50
1.04
0.98
5.8
7.60
6.5
0.3
Unit
V
V
V
V
m
m
V
mA
mA
nF
nF
nF
nC
ns
ns
mJ
ns
ns
mJ
Remarks
• Case temperature limited to
T
c
= 125°C max, recomm.
T
op
= -40 ... +150°C, product
rel. results valid for T
j
= 150°
5.5
6
0.1
12.02
1.18
1.178
2210
3.8
320
45
14
550
72
22
0.14
K/W
GB
© by SEMIKRON
Rev. 4 – 23.03.2011
1
SEMIKRON [ SEMIKRON INTERNATIONAL ]
