SAMWIN
Fig. 1. On-state characteristics
V
GS
15.0 V
10.0 V
9.0 V
8.0 V
7.0 V
Bottom : 5.5 V
Top :
SW2N65
Fig. 2. Transfer characteristics
I
D
, Drain Current [A]
I
D
, Drain Current [A]
10
0
10
0
150 C
25 C
-55 C
*. Notes :
1. V
DS
= 40V
2. 250us Pulse Test
o
o
o
10
-1
*. Notes :
1. 250¥ىs Pulse Test
O
2. T
C
= 25 C
10
-2
10
-1
10
0
10
1
10
-1
2
3
4
5
6
7
8
9
10
V
DS
, Drain-Source Voltage [V]
V
GS
, Gate-Source Voltage [V]
Fig. 3. On-resistance variation vs.
drain current and gate voltage
12
Fig. 4. On state current vs.
diode forward voltage
Drain-Source On-Resistance [¥ط]
8
V
GS
= 10V
I
DR
, Reverse Drain Current [A]
10
R
DS(ON)
,
6
10
0
150 C
O
25 C
O
4
V
GS
= 20V
2
*. Note : T
J
= 25 C
O
*. Notes :
1. V
GS
= 0V
2. 250us Pulse Test
0
0
1
2
3
4
5
6
10
-1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
I
D
, Drain Current [A]
V
SD
, Source-Drain voltage [V]
Fig. 5. Capacitance characteristics
(Non-Repetitive)
500
C
oss
=C
ds
+C
gd
C
rss
=C
gd
C
iss
=C
gs
+C
gd
(C
ds
=shorted)
Fig. 6. Gate charge characteristics
12
V
GS
, Gate-Source Voltage [V]
10
V
DS
= 300V
V
DS
= 520V
400
Capacitance [pF]
*. Notes :
1. V
GS
= 0V
8
300
2. f=1MHz
C
iss
6
200
C
oss
4
100
C
rss
2
*. Note : I
D
= 2.0 A
0
0
5
10
15
20
25
30
35
40
0
1
2
3
4
5
6
7
8
V
DS
, Drain-Source Voltage [V]
Q
G
, Total Gate Charge [nC]
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SEMIPOWER [ XIAN SEMIPOWER ELECTRONIC TECHNOLOGY CO., LTD. ]
