MCR100-6
Electrical Characteristics
Symbol
Items
( T
C
= 25 °C unless otherwise noted )
Conditions
V
AK
= V
DRM
or V
RRM ;
R
GK
= 1000
Ω
T
C
= 25 °C
T
C
= 125 °C
( I
TM
= 1 A, Peak )
V
AK
= 6 V, R
L
=100
Ω
Ratings
Min.
Typ.
Max.
Unit
I
DRM
Repetitive Peak Off-State
Current
Peak On-State Voltage (1)
─
─
─
─
─
1.2
10
200
1.7
㎂
V
TM
V
I
GT
Gate Trigger Current (2)
T
C
= 25 °C
T
C
= - 40 °C
V
D
= 7 V, R
L
=100
Ω
─
─
─
─
200
500
㎂
V
GT
Gate Trigger Voltage (2)
T
C
= 25 °C
T
C
= - 40 °C
V
AK
= 12 V, R
L
=100
Ω
V
D
= Rated V
DRM ,
form , R
GK
= 1000
Ω
T
J
= 125 °C
I
PK
= 20A ; P
W
= 10
㎲
;
di
G
/dt = 1A/㎲
Igt = 20mA
V
AK
= 12 V, Gate Open
Initiating Curent = 20mA
T
C
= 25 °C
T
C
= - 40 °C
Junction to case
Junction to Ambient
T
C
= 125 °C
─
─
0.2
─
─
─
0.8
1.2
─
V
V
GD
Non-Trigger Gate Voltage (1)
Critical Rate of Rise Off-State
Voltage
Critical Rate of Rise On-State
Current
V
Exponential wave-
500
800
─
dv/dt
V/㎲
di/dt
─
─
50
A/㎲
I
H
Holding Current
─
─
─
─
2
─
─
─
5.0
10
60
150
mA
R
th(j-c)
R
th(j-a)
Thermal Impedance
Thermal Impedance
°C/W
°C/W
※
Notes :
1. Pulse Width
≤
1.0 ms , Duty cycle
≤
1%
2. Does not include R
GK
in measurement.
2/5
SEMIWELL [ SEMIWELL SEMICONDUCTOR ]
