STM2A60
Electrical Characteristics
Symbol
Items
Repetitive Peak Off-State
Current
Peak On-State Voltage
Ⅰ
Ⅱ
Ⅲ
Ⅰ
Ⅱ
Ⅲ
Non-Trigger Gate Voltage
Critical Rate of Rise Off-State
Voltage
Critical Rate of Rise Off-State
Voltage at Commutation
Holding Current
Thermal Impedance
Thermal Impedance
(pcb mounted)
Junction to solder point
Junction to Ambient(minimum footprint)
Junction to Ambient(pad area as in fig 11.)
T
J
= 125 °C, V
D
= 1/2 V
DRM
T
J
= 125 °C, V
D
=2/3 V
DRM
exponential waveform, gate open circuit
T
J
= 125 °C, [di/dt]c = -0.75 A/ms,
V
D
=2/3 V
DRM
Gate Trigger Voltage
V
D
= 6 V, R
L
=10
Ω
Gate Trigger Current
V
D
= 6 V, R
L
=10
Ω
Conditions
V
D
= V
DRM
, Single Phase, Half Wave
T
J
= 125 °C
I
T
= 2.1 A, Inst. Measurement
Ratings
Min.
─
─
─
─
─
─
─
─
0.2
1000
Typ.
─
─
─
─
─
─
─
─
─
─
Max.
0.5
1.6
20
20
20
1.5
1.5
1.5
─
─
Unit
I
DRM
V
TM
I
+GT1
I
-GT1
I
-GT3
V
+GT1
V
-GT1
V
-GT3
V
GD
dv/dt
mA
V
mA
V
V
V/㎲
V/㎲
mA
°C/W
°C/W
°C/W
(dv/dt)c
I
H
R
th(j-sp)
R
th(j-a)
5.0
─
─
─
─
─
5
─
─
─
─
─
15
156
70
※
Notes :
1. Pulse Width
≤
300us , Duty cycle
≤
2%
2/6
SEMIWELL [ SEMIWELL SEMICONDUCTOR ]
