ST 13005
NPN Silicon Power Transistors
for high-voltage, high-speed power switching
applications.
TO-220 Plastic Package
Absolute Maximum Ratings (T
a
= 25
O
C)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Power Dissipation (T
a
= 25
O
C)
Power Dissipation (T
c
= 25
O
C)
Junction Temperature
Storage Temperature Range
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
tot
P
tot
T
j
T
S
Value
700
400
9
4
2
75
150
- 55 to + 150
Unit
V
V
V
A
W
W
O
C
C
O
Characteristics at T
a
= 25
O
C
Parameter
DC Current Gain
at V
CE
= 5 V, I
C
= 1 A
at V
CE
= 5 V, I
C
= 2 A
Collector Base Cutoff Current
at V
CB
= 700 V
Emitter Base Cutoff Current
at V
EB
= 9 V
Collector Emitter Breakdown Voltage
at I
C
= 10 mA
Collector Emitter Saturation Voltage
at I
C
= 1 A, I
B
= 0.2 A
at I
C
= 2 A, I
B
= 0.5 A
at I
C
= 4 A, I
B
= 1 A
Base Emitter Saturation Voltage
at I
C
= 1 A, I
B
= 0.2 A
at I
C
= 2 A, I
B
= 0.5 A
Gain Bandwidth Product
at V
CE
= 10 V, I
C
= 500 mA, f = 1 MHz
Collector Base Capacitance
at V
CB
= 10 V, f = 0.1 MHz
Symbol
h
FE
h
FE
I
CBO
I
EBO
V
(BR)CEO
V
CE(sat)
V
CE(sat)
V
CE(sat)
V
BE(sat)
V
BE(sat)
f
T
C
cb
Min.
10
8
-
-
400
-
-
-
-
-
4
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
65
Max.
60
40
1
1
-
0.5
0.6
1
1.2
1.6
-
-
Unit
-
-
mA
mA
V
V
V
V
V
V
MHz
pF
SEMTECH ELECTRONICS LTD.
(Subsidiary
of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 28/08/2008
SEMTECH_ELEC [ SEMTECH ELECTRONICS LTD. ]
