ST 8050 (1.5A)
NPN Silicon Epitaxial Planar Transistor
for switching and amplifier applications.
Especially suitable for AF-driver stages
and low power output stages.
On special request, these transistors can be
manufactured in different pin configurations.
1.Emitter 2.Base 3.Collector
TO-92 Plastic Package
Weight approx. 019g
Absolute Maximum Ratings (T
a
= 25
O
C)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
j
T
S
Value
40
25
6
1.5
1
150
- 55 to + 150
Unit
V
V
V
A
W
O
C
C
O
Characteristics at T
a
= 25
O
C
Parameter
DC Current Gain
at V
CE
= 1 V, I
C
= 5 mA
at V
CE
= 1 V, I
C
= 100 mA
at V
CE
= 1 V, I
C
= 800 mA
Collector Cutoff Current
at V
CB
= 35 V
Emitter Cutoff Current
at V
BE
= 6 V
Collector Base Breakdown Voltage
at I
C
= 100 µA
Collector Emitter Breakdown Voltage
at I
C
= 2 mA
Emitter Base Breakdown Voltage
at I
E
= 100 µA
Collector Emitter Saturation Voltage
at I
C
= 800 mA, I
B
= 80 mA
Base Emitter Saturation Voltage
at I
C
= 800 mA, I
B
= 80 mA
Base Emitter Voltage
at I
C
= 10 mA, V
CE
= 1 V
Gain Bandwidth Product
at V
CE
= 10 V, I
C
= 50 mA
Collector Base Capacitance
at V
CB
= 10 V, f = 1 MHz
Symbol
h
FE
h
FE
h
FE
h
FE
I
CBO
I
EBO
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
V
CE(sat)
V
BE(sat)
V
BE
f
T
C
OB
Min.
45
120
160
40
-
-
40
25
6
-
-
-
120
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
15
Max.
-
200
300
-
100
100
-
-
-
0.5
1.2
1
-
-
Unit
-
-
-
-
nA
nA
V
V
V
V
V
V
MHz
pF
8050C
8050D
SEMTECH ELECTRONICS LTD.
(Subsidiary
of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 13/03/2007
SEMTECH_ELEC [ SEMTECH ELECTRONICS LTD. ]
