GL4800
GL4800
s
Features
1. Thin type ( Thickness : 1.5mm )
2. Beam angle (
∆θ :
TYP. ± 30˚ )
3. Radiant flux
(
Φ
e
: MIN. 0.7mW at I
F
= 20mA )
4. Epoxy resin package
Thin Type Infrared Emitting
Diode
s
Outline Dimensions
Rest of gate 0.3
MAX.
3.0
±
0.2
1.6
1.0
2
-
C0.5
0.8
( Unit : mm )
1.5
±
0.2
0.8
Pink transparent
epoxy resin
Protruded resin
1.7
φ0.8
3.5
±
0.2
0.7
s
Applications
1. Floppy disk drives
2. Optoelectronic switches
MIN.0.5
17.5
±
0.5
2
-
0.9
1.8
2
-
0.45
0.8
1
2
1 Anode
2 Cathode
2.54
0.25
1
2
s
Absolute Maximum Ratings
Parameter
Power dissipation
Forward current
*1
Peak forward current
Reverse voltage
Operating temperature
Storage temperature
*2
Soldering temperature
Symbol
P
I
F
I
FM
V
R
T
opr
T
stg
T
sol
Rating
75
50
1
6
- 25 to + 85
- 40 to + 85
260
( Ta = 25˚C )
Unit
mW
mA
A
V
˚C
˚C
˚C
*1 Pulse width<=100µ s, Duty ratio= 0.01
*2 For 3 seconds at the position of 1.8mm from the surface of resin edge.
s
Electro-optical Characteristics
Parameter
Forward voltage
Peak forward voltage
Reverse current
Terminal capacitance
Frequency response
Radiant flux
Peak emission wavelength
Half intensity wavelength
Symbol
V
F
V
FM
I
R
C
t
f
c
Φ
e
λ
p
∆λ
Conditions
I
F
= 20mA
I
FM
= 0.5A
V
R
= 3V
V
R
= 0, f = 1MHz
-
I
F
= 20mA
I
F
= 5mA
I
F
= 5mA
MIN.
-
-
-
-
-
0.7
-
-
TYP.
1.2
3.0
-
70
300
1.6
950
45
( Ta = 25˚C )
MAX.
1.4
4.0
10
-
-
3.0
-
-
Unit
V
V
µ
A
pF
kHz
mW
nm
nm
“
In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs,
data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.
”
SHARP [ SHARP ELECTRIONIC COMPONENTS ]
