AO3401A 参数 Datasheet PDF下载

AO3401A

30V P-Channel MOSFET

Electrical Characteristics (T

J

=25° unless otherwise noted)

C

Symbol

Parameter

Conditions

I

D

=-250µA, V

GS

=0V

V

DS

=-30V, V

GS

=0V

T

J

=55°

C

V

DS

=0V, V

GS

= ±12V

V

DS

=V

GS

I

D

=-250µA

V

GS

=-10V, V

DS

=-5V

V

GS

=-10V, I

D

=-4.0A

R

DS(ON)

Static Drain-Source On-Resistance

T

J

=125°

C

V

GS

=-4.5V, I

D

=-3.5A

V

GS

=-2.5V, I

D

=-2.5A

g

FS

V

SD

I

S

Forward Transconductance

Diode Forward Voltage

V

DS

=-5V, I

D

=-4.0A

I

S

=-1A,V

GS

=0V

-0.5

-27

41

62

47

60

17

-0.7

-1

-2

645

V

GS

=0V, V

DS

=-15V, f=1MHz

V

GS

=0V, V

DS

=0V, f=1MHz

4

80

55

7.8

14

V

GS

=-10V, V

DS

=-15V, I

D

=-4.0A

7

1.5

2.5

6.5

V

GS

=-10V, V

DS

=-15V, R

L

=3.75Ω,

R

GEN

=3Ω

I

F

=-4.0A, dI/dt=100A/µs

2

Min

-30

Typ

Max

Units

V

STATIC PARAMETERS

BV

DSS

Drain-Source Breakdown Voltage

I

DSS

I

GSS

V

GS(th)

I

D(ON)

Zero Gate Voltage Drain Current

Gate-Body leakage current

Gate Threshold Voltage

On state drain current

-1

-5

±100

-0.9

-1.3

50

75

60

85

µA

nA

V

A

mΩ

mΩ

mΩ

S

V

A

pF

pF

pF

Maximum Body-Diode Continuous Current

DYNAMIC PARAMETERS

Input Capacitance

C

iss

C

oss

C

rss

R

g

Output Capacitance

Reverse Transfer Capacitance

Gate resistance

12

Ω

nC

nC

nC

nC

ns

ns

ns

ns

ns

nC

SWITCHING PARAMETERS

Q

g

(10V) Total Gate Charge

Q

g

(4.5V) Total Gate Charge

Q

gs

Q

gd

t

D(on)

t

r

t

D(off)

t

f

t

rr

Q

rr

Gate Source Charge

Gate Drain Charge

Turn-On DelayTime

Turn-On Rise Time

Turn-Off DelayTime

Turn-Off Fall Time

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge I

F

=-4.0A, dI/dt=100A/µs

3.5

41

9

11

3.5

A. The value of R

θJA

is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T

A

=25° The

C.

value in any given application depends on the user's specific board design.

B. The power dissipation P

D

is based on T

J(MAX)

=150° using

≤

10s junction-to-ambient thermal resistance.

C,

C.

C. Repetitive rating, pulse width limited by junction temperature T

J(MAX)

=150° Ratings are based on low frequency and duty cycles to keep

initialT

J

=25°

C.

D. The R

θJA

is the sum of the thermal impedence from junction to lead R

θJL

and lead to ambient.

E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.

F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in

2

FR-4 board with

C.

2oz. Copper, assuming a maximum junction temperature of T

J(MAX)

=150° The SOA curve provides a single pulse ratin g.

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

2/5

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