AO3404A
N-Channel Enhancement Mode Field
Effect Transistor
General Description
The AO3404A uses advanced trench technology to provide excellent R
DS(ON)
and low gate charge. This
device is suitable for use as a load switch or in PWM applications. The source leads are separated to
allow a Kelvin connection to the source, which may be used to bypass the source inductance.
Features
V
DS
(V) = 30V
I
D
= 5.8A
R
DS(ON)
< 25mΩ
R
DS(ON)
< 35mΩ
(V
GS
= 10V)
(V
GS
= 10V)
(V
GS
= 4.5V)
D
G
S
Absolute Maximum Ratings T
A
=25° unless otherwise noted
C
Parameter
Symbol
Drain-Source Voltage
V
DS
Gate-Source Voltage
Continuous Drain
Current
A,F
Pulsed Drain Current
Power Dissipation
B
Maximum
30
±20
5.8
4.9
64
1.4
0.9
-55 to 150
Units
V
V
A
V
GS
T
A
=25°
C
T
A
=70°
C
C
T
A
=25°
T
A
=70°
C
I
D
I
DM
P
D
T
J
, T
STG
W
°
C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
A
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
A
Maximum Junction-to-Lead
C
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJL
Typ
65
85
63
Max
90
125
80
Units
°
C/W
°
C/W
°
C/W
1/4
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