Freescale
N-Channel 20-V (D-S) MOSFET
These miniature surface mount MOSFETs
utilize a high cell density trench process to
provide low r
DS(on)
and to ensure minimal
power loss and heat dissipation. Typical
applications are DC-DC converters and
power management in portable and
battery-powered products such as
computers, printers, PCMCIA cards,
cellular and cordless telephones.
•
•
•
•
Low r
DS(on)
provides higher efficiency and
extends battery life
Low thermal impedance copper leadframe
SOT-23 saves board space
Fast switching speed
High performance trench technology
AO3414/MC3414
/
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
(Ω)
0.047 @ V
GS
= 4.5V
20
0.055@ V
GS
= 2.5V
0.087@ V
GS
= 1.8V
I
D
(A)
4.3
4.0
3.2
G
D
S
ABSOLUTE MAX
IMUM RATING (T = 25 C UNLESS OTHERW
S
A
ISE NOTED)
Param
eter
Sym
bol Ratings Units
D -So rce Voltage
rain u
20
V
DS
V
V
GS
G
ate-S u Voltage
o rce
±
8
C n n o s Drain Current
o ti u u
Pulsed Drain Current
b
a
a
o
T=5 C
A
2
T
A
=70 C
o
o
I
D
I
DM
I
S
4.3
3.6
10
1.6
1.3
0.9
A
W
o
A
C n n o s S u C rren (Do e Conduction)
o ti u u o rce u t i d
Po er Dissipation
w
a
T=5 C
A
2
T
A
=70 C
o
o
P
D
Operating Junction and Sto e T p
rag em eratu Range
re
T
J
, T
stg
-55 to 150
C
THERM AL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
a
Symbol M aximum
R
T HJA
100
166
Units
o
t <= 5 sec
Steady-State
C/W
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
b.
Pulse width limited by maximum junction temperature
1
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SHENZHENFREESCALE [ ShenZhen FreesCale Electronics. Co., Ltd ]
