AO4435
30V P-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
80
-10V
-8V
60
-I
D
(A)
-6V
-I
D
(A)
60
80
V
DS
= -5V
40
-4.5V
20
V
GS
= -4V
0
0
1
2
3
4
5
-V
DS
(Volts)
Figure 1: On-Region Characteristics
40
40
125°
C
20
25°
C
0
0
1
2
3
4
5
6
-V
GS
(Volts)
Figure 2: Transfer Characteristics
1.6
Normalized On-Resistance
35
30
R
DS(ON)
(m
Ω
)
25
20
V
GS
=-5V
1.4
1.2
1.0
0.8
0.6
V
GS
=-10V
I
D
=-10A
V
GS
=-20V
I
D
=-11A
V
GS
=-5V
I
D
=-5A
V
GS
=-10V
15
10
V
GS
=-20V
5
0
5
10
15
20
-I
D
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
0
25
50
75
100
125
150
175
Temperature (°
C)
Figure 4: On-Resistance vs. Junction
Temperature
55
I
D
=-11A
1E+01
1E+00
45
1E-01
R
DS(ON)
(m
Ω
)
-I
S
(A)
35
1E-02
1E-03
1E-04
15
25°
C
5
2
4
6
8
10
12
14
16
18
20
-V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
1E-05
1E-06
0.0
0.2
0.4
0.6
0.8
1.0
-V
SD
(Volts)
Figure 6: Body-Diode Characteristics
25°
C
125°
C
25
125°
C
3/5
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