Freescale
These miniature surface mount MOSFETs utilize a
high cell density trench process to provide low
r
DS(on)
and to ensure minimal power loss and heat
dissipation. Typical applications are DC-DC
converters and power management in portable and
battery-powered products such as computers,
printers, PCMCIA cards, cellular and cordless
telephones.
•
•
•
•
Low r
DS(on)
provides higher efficiency and
extends battery life
Low thermal impedance copper leadframe
TSSOP-8 saves board space
Fast switching speed
High performance trench technology
AO8 8 10/ MC8 8 10
Dual N-Channel Logical Level MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
(OHM)
0.022 @ V
GS
= 4.5 V
20
0.030 @ V
GS
= 2.5V
0.047 @ V
GS
= 1.8V
TSSOP-8
Top View
D1
S1
S1
G1
1
2
3
4
8
7
6
5
D2
S2
S2
G2
G
1
S
1
N-Channel MOSFET
G
2
S
2
N-Channel MOSFET
D
1
I
D
(A)
6.8
5.8
4.7
D
2
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol Maximum Units
Drain-Source Voltage
V
DS
20
V
Gate-Source Voltage
V
GS
±12
Continuous Drain Current
Pulsed Drain Current
b
a
a
o
T
A
=25 C
T
A
=70 C
o
o
I
D
I
DM
I
S
6.8
5.4
±30
1.5
1.5
1.0
-55 to 150
A
W
o
A
Continuous Source Current (Diode Conduction)
Power Dissipation
a
T
A
=25 C
T
A
=70 C
o
o
P
D
T
J
, T
stg
Operating Junction and Storage Temperature Range
C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
a
Symbol
R
thJA
Typ
72
100
Max
83
120
o
t <= 10 sec
Steady State
C/W
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
b.
Pulse width limited by maximum junction temperature
1
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