SUD50N03-12P
N-Channel
30 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
V
DS
(V)
30
R
DS(on)
()
0.0120 at V
GS
= 10 V
0.0175 at V
GS
= 4.5 V
I
D
(A)
a
17.5
14.5
• TrenchFET
®
Power MOSFET
• 100 % R
g
and UIS Tested
TO-252
D
G
Drain Connected to Tab
G
D
Top View
Ordering Information:
SUD50N03-12P-E3 (Lead (PB) free)
S
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25 °C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a
Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
L = 0.1 mH
T
C
= 25 °C
T
A
= 25 °C
T
A
= 25 °C
T
A
= 100 °C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
I
AS
E
AS
P
D
T
J
, T
stg
Limit
30
± 20
17.5
12.4
40
5
30
45
46.8
6.5
a
- 55 to 175
mJ
W
°C
A
Unit
V
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
a
Maximum Junction-to-Case
Note:
a. Surface mounted on FR4 board, t
10 s.
t
10 s
Steady State
Symbol
R
thJA
R
thJC
Typical
18
40
2.6
Maximum
23
50
3.2
°C/W
Unit
1/7
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