Rev.2.3
_00
ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR
S-1000 Series
Electrical Characteristics
1. Nch open-drain output products
Table 9
(Ta
=
25
°
C unless otherwise specified)
Item
Detection voltage
*1
Hysteresis width
Current consumption
Operating voltage
Output current
Leakage current
Response time
Symbol
Condition
Min.
Typ.
Max.
−
V
DET(S)
×
1.01
−
V
DET
×
0.07
900
Measure-
ment
Unit
circuit
V
V
nA
nA
V
mA
nA
µ
s
−
V
DET
V
HYS
I
SS
V
DD
I
OUT
I
LEAK
t
PLH
−
V
DET(S)
−
V
DET(S)
×
0.99
−
V
DET
−
V
DET
−
×
0.03
×
0.05
V
DD
= −
V
DET(S)
+
1.5 V S-1000N15 to 39
−
350
−
1
1
2
2
1
3
3
1
1
V
DD
=
5.5 V
−
S-1000N40 to 46
−
350
−
900
5.5
−
0.95
1.36
−
−
−
Output transistor,
Nch, V
DS
=
0.5 V, V
DD
=
1.2 V
Output transistor,
Nch, V
DS
=
5.5 V, V
DD
=
5.5 V
−
2.55
−
−
±
100
100
60
±
350
∆−V
DET
Detection voltage
*2
∆Ta•−V
DET
temperature coefficient
Ta
= −
40 to
+
85
°
C
ppm /
°
C
*1.
−
V
DET
: Actual detection voltage value,
−
V
DET(S)
: Specified detection voltage value (The center value of the detection voltage
range in
Table 1
.)
*2.
The temperature change ratio in the detection voltage [mV / °C] is calculated by using the following equation.
∆ −
V
DET
[
mV /
°
C
]
*1
= −
V
DET(S)
(
Typ.
)
[
V
]
*2
× ∆ −
V
DET
[
ppm /
°
C
]
*3
÷
1000
∆
Ta
•
−
V
DET
∆
Ta
*1.
Temperature change ratio of the detection voltage
*2.
Specified detection voltage
*3.
Detection voltage temperature coefficient
Seiko Instruments Inc.
9
SII [ SEIKO INSTRUMENTS INC ]
