ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR
S-1000 Series
Rev.2.3_00
2. CMOS output products
Table 10
(Ta = 25 °C unless otherwise specified)
Measure-
ment
circuit
Item
Symbol
Condition
Min.
Typ.
Max. Unit
−VDET(S) −VDET(S) −VDET(S)
×0.99 ×1.01
−VDET −VDET −VDET
Detection voltage*1
Hysteresis width
−VDET
−
V
V
1
1
VHYS
−
×0.03
−
×0.05 ×0.07
V
DD = −VDET(S)+ 1.5 V S-1000C15 to 39
350
350
−
900
900
5.5
nA
nA
V
2
2
1
Current consumption
Operating voltage
ISS
VDD = 5.5 V
S-1000C40 to 46
−
VDD
−
0.95
Output transistor,
Nch, VDS = 0.5 V, VDD = 1.2 V
Output transistor,
Pch, VDS = 0.5 V, VDD = 5.5 V
−
1.36
2.55
−
mA
3
Output current
IOUT
1.71
−
2.76
−
−
mA
4
1
1
Response time
tPLH
60
350
µs
ppm/
°C
∆−VDET
Detection voltage
Ta = −40 to +85 °C
−
100
temperature coefficient*2
∆Ta•−VDET
*1. −VDET: Actual detection voltage value, −VDET(S): Specified detection voltage value (The center value of the detection voltage
range in Table 2.)
*2. The temperature change ratio in the detection voltage [mV / °C] is calculated by using the following equation.
∆ − VDET
∆Ta
∆ − VDET
[
mV /°C *1
]
= −VDET(S)
(
Typ.
)
[
V *2
]
×
[
ppm/°C *3
]
÷1000
∆Ta • −VDET
*1. Temperature change ratio of the detection voltage
*2. Specified detection voltage
*3. Detection voltage temperature coefficient
10
Seiko Instruments Inc.
SII [ SEIKO INSTRUMENTS INC ]
