HUR1520S, HUR1530S
High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode
C(TAB)
A
A
NC
A=Anode, NC= No connection, TAB=Cathode
C
Dimensions TO-263(D
2
PAK)
Dim.
A
A1
b
b2
c
c2
D
D1
E
E1
e
L
L1
L2
L3
L4
R
Millimeter
Min.
Max.
4.06
2.03
0.51
1.14
0.46
1.14
8.64
8.00
4.83
2.79
0.99
1.40
0.74
1.40
9.65
8.89
Inches
Min. Max.
.160
.080
.020
.045
.018
.045
.340
.315
.190
.110
.039
.055
.029
.055
.380
.350
9.65
10.29
6.22
8.13
2.54 BSC
14.61
2.29
1.02
1.27
0
0.46
15.88
2.79
1.40
1.78
0.20
0.74
.380
.405
.245
.320
.100 BSC
.575
.090
.040
.050
0
.018
.625
.110
.055
.070
.008
.029
HUR1520S
HUR1530S
V
RSM
V
200
300
V
RRM
V
200
300
1.
2.
3.
4.
Gate
Collector
Emitter
Collector
Botton Side
Symbol
I
FRMS
I
FAVM
I
FSM
E
AS
I
AR
T
VJ
T
VJM
T
stg
P
tot
M
d
Weight
T
C
=25
o
C
mounting torque
typical
o
Test Conditions
T
C
=135 C; rectangular, d=0.5
T
VJ
=45
o
C; t
p
=10ms (50Hz), sine
T
VJ
=25
o
C; non-repetitive; I
AS
=2.5A; L=180uH
V
A
=1.5
.
V
R
typ.; f=10kHz; repetitive
Maximum Ratings
35
15
140
0.8
0.3
-55...+175
175
-55...+150
95
0.4...0.6
2
Unit
A
A
mJ
A
o
C
W
Nm
g
SIRECTIFIER [ SIRECTIFIER SEMICONDUCTORS ]
