HUR2060CT
High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode
Symbol
Test Conditions
Characteristic Values
Unit
typ.
max.
TVJ=25oC; VR=VRRM
TVJ=150oC; VR=VRRM
60
0.25
uA
mA
IR
IF=10A; TVJ=150oC
1.42
2.10
V
VF
TVJ=25oC
RthJC
RthCH
2.5
K/W
0.5
35
IF=1A; -di/dt=50A/us; VR=30V; TVJ=25oC
VR=100V; IF=12A; -diF/dt=100A/us; TVJ=100oC
ns
A
trr
4.4
IRM
FEATURES
APPLICATIONS
ADVANTAGES
* International standard package
* Planar passivated chips
* Very short recovery time
* Extremely low switching losses
* Low IRM-values
* Antiparallel diode for high frequency
switching devices
* Avalanche voltage rated for reliable
operation
* Antisaturation diode
* Snubber diode
* Free wheeling diode in converters
and motor control circuits
* Rectifiers in switch mode power
supplies (SMPS)
* Soft reverse recovery for low
EMI/RFI
* Low IRM reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating
switch
* Soft recovery behaviour
* Inductive heating
* Uninterruptible power supplies (UPS)
* Ultrasonic cleaners and welders
SIRECTIFIER [ SIRECTIFIER SEMICONDUCTORS ]
