HUR30100, HUR30120
High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode
Dimensions TO-247AC
A
C(TAB)
C
A=Anode, C=Cathode, TAB=Cathode
V
RSM
V
1000
1200
V
RRM
V
1000
1200
A
C
Dim.
A
B
C
D
E
F
G
H
J
K
L
M
N
Millimeter
Min. Max.
19.81 20.32
20.80 21.46
15.75 16.26
3.55 3.65
4.32
5.4
1.65
-
1.0
10.8
4.7
0.4
1.5
5.49
6.2
2.13
4.5
1.4
11.0
5.3
0.8
2.49
Inches
Min.
Max.
0.780
0.819
0.610
0.140
0.170
0.212
0.065
-
0.040
0.426
0.185
0.016
0.087
0.800
0.845
0.640
0.144
0.216
0.244
0.084
0.177
0.055
0.433
0.209
0.031
0.102
HUR30100
HUR30120
Symbol
I
FRMS
I
FAVM
I
FSM
E
AS
I
AR
T
VJ
T
VJM
T
stg
P
tot
M
d
Weight
T
C
=25
o
C
mounting torque
typical
o
Test Conditions
T
C
=115 C; rectangular, d=0.5
T
VJ
=45
o
C; t
p
=10ms (50Hz), sine
T
VJ
=25
o
C; non-repetitive; I
AS
=11.5A; L=180uH
V
A
=1.25
.
V
R
typ.; f=10kHz; repetitive
Maximum Ratings
70
30
200
14
1.2
-55...+175
175
-55...+150
165
0.8...1.2
6
Unit
A
A
mJ
A
o
C
W
Nm
g
SIRECTIFIER [ SIRECTIFIER SEMICONDUCTORS ]
