欢迎访问ic37.com |
会员登录 免费注册
发布采购

HUR820S 参数 Datasheet PDF下载

HUR820S图片预览
型号: HUR820S
PDF下载: 下载PDF文件 查看货源
内容描述: 快速恢复二极管快恢复二极管,软恢复特性高性能高结温超快恢复外延二极管的软恢复行为,高性能宽温超快速恢复外延二极管, TJ = -55 ° C〜 + 175 ° C, TJM = + 175 ℃。 [快速恢复二极管Fast Recovery Diodes,软恢复特性高性能高结温超快恢复外延二极管Soft Recovery Behaviour ,High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diodes,Tj = -55°C ~ +175°C, Tjm = +175°C。]
分类和应用: 二极管快恢复二极管快速恢复二极管
文件页数/大小: 2 页 / 155 K
品牌: SIRECTIFIER [ SIRECTIFIER SEMICONDUCTORS ]
 浏览型号HUR820S的Datasheet PDF文件第2页  
HUR820S
High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode
C(TAB)
A
A
NC
A=Anode, NC= No connection, TAB=Cathode
C
Dimensions TO-263(D
2
PAK)
Dim.
A
A1
b
b2
c
c2
D
D1
E
E1
e
L
L1
L2
L3
L4
R
Millimeter
Min.
Max.
4.06
2.03
0.51
1.14
0.46
1.14
8.64
8.00
4.83
2.79
0.99
1.40
0.74
1.40
9.65
8.89
Inches
Min. Max.
.160
.080
.020
.045
.018
.045
.340
.315
.190
.110
.039
.055
.029
.055
.380
.350
9.65
10.29
6.22
8.13
2.54 BSC
14.61
2.29
1.02
1.27
0
0.46
15.88
2.79
1.40
1.78
0.20
0.74
.380
.405
.245
.320
.100 BSC
.575
.090
.040
.050
0
.018
.625
.110
.055
.070
.008
.029
HUR820S
V
RSM
V
200
V
RRM
V
200
1.
2.
3.
4.
Gate
Collector
Emitter
Collector
Botton Side
Symbol
I
FRMS
I
FAVM
I
FSM
E
AS
I
AR
T
VJ
T
VJM
T
stg
P
tot
M
d
Weight
T
C
=25
o
C
mounting torque
typical
o
Test Conditions
T
C
=150 C; rectangular, d=0.5
T
VJ
=45
o
C; t
p
=10ms (50Hz), sine
T
VJ
=25
o
C; non-repetitive; I
AS
=2A; L=180uH
V
A
=1.5
.
V
R
typ.; f=10kHz; repetitive
Maximum Ratings
35
8
80
0.5
0.2
-55...+175
175
-55...+150
60
0.4...0.6
2
Unit
A
A
mJ
A
o
C
W
Nm
g