MBRB2515L
Wide Temperature Range and High T
jm
Schottky Barrier Rectifiers
C(TAB)
A
A
C
A=Anode, C=Cathode, TAB=Cathode
C
Dimensions TO-263(D
2
PAK)
Dim.
A
A1
b
b2
c
c2
D
D1
E
E1
e
L
L1
L2
L3
L4
R
Millimeter
Min.
Max.
4.06
2.03
0.51
1.14
0.46
1.14
8.64
8.00
4.83
2.79
0.99
1.40
0.74
1.40
9.65
8.89
Inches
Min. Max.
.160
.080
.020
.045
.018
.045
.340
.315
.190
.110
.039
.055
.029
.055
.380
.350
9.65
10.29
6.22
8.13
2.54 BSC
14.61
2.29
1.02
1.27
0
0.46
15.88
2.79
1.40
1.78
0.20
0.74
.380
.405
.245
.320
.100 BSC
.575
.090
.040
.050
0
.018
.625
.110
.055
.070
.008
.029
MBRB2515L
Symbol
I
(AV)
I
FSM
dv/dt
V
F
V
RRM
V
15
V
RMS
V
10.5
V
DC
V
15
1.
2.
3.
4.
Gate
Collector
Emitter
Collector
Botton Side
Characteristics
Maximum Average Forward Rectified Current
@T
C
=90
o
C
Maximum Ratings
25
150
10000
I
F
=19A @T
J
=70
o
C
I
F
=25A @T
J
=70
o
C
I
F
=25A @T
J
=25
o
C
@T
J
=25
o
C
@T
J
=100
o
C
0.28
0.42
0.45
15
200
1.0
1150
-55 to +125
-55 to +150
Unit
A
A
V/us
V
Peak Forward Surge Current 8.3ms Single Half-Sine-Wave
Superimposed On Rated Load (JEDEC METHOD)
Voltage Rate Of Change (Rated V
R
)
Maximum Forward
Voltage At (Note 1)
Maximum DC Reverse Current
At Rated DC Blocking Voltage
Typical Thermal Resistance (Note 3)
Typical Junction Capacitance Per Element (Note 2)
Operating Temperature Range
Storage Temperature Range
I
R
R
OJC
C
J
T
J
T
STG
mA
o
C/W
pF
o
o
C
C
NOTES: 1. 300us Pulse Width, Duty Cycle 2%.
2. Measured At 1.0MHz And Applied Reverse Voltage Of 4.0V DC.
3. Thermal Resistance Junction To Case.
FEATURES
* Guard ring for transient protection
* Low power loss, high efficiency
* High current capability, low V
F
* High surge capacity
* For use in low voltage, high frequency inverters, free
whelling, and polarity protection applications
MECHANICAL DATA
* Case: D
2
PAK molded plastic
* Polarity: As marked on the body
* Weight: 0.06 ounces, 1.7 grams
SIRECTIFIER [ SIRECTIFIER SEMICONDUCTORS ]
