MURB1610CT thru MURB1620CT
Ultra Fast Recovery Diodes
C(TAB)
A
A
A
A=Anode, C=Cathode, TAB=Cathode
C
A
Dimensions TO-263(D
2
PAK)
Dim.
A
A1
b
b2
c
c2
D
D1
E
E1
e
L
L1
L2
L3
L4
R
Millimeter
Min.
Max.
4.06
2.03
0.51
1.14
0.46
1.14
8.64
8.00
4.83
2.79
0.99
1.40
0.74
1.40
9.65
8.89
Inches
Min. Max.
.160
.080
.020
.045
.018
.045
.340
.315
.190
.110
.039
.055
.029
.055
.380
.350
9.65
10.29
6.22
8.13
2.54 BSC
14.61
2.29
1.02
1.27
0
0.46
15.88
2.79
1.40
1.78
0.20
0.74
.380
.405
.245
.320
.100 BSC
.575
.090
.040
.050
0
.018
.625
.110
.055
.070
.008
.029
MURB1610CT
MURB1620CT
V
RRM
V
100
200
V
RMS
V
70
140
V
DC
V
100
200
1.
2.
3.
4.
Gate
Collector
Emitter
Collector
Botton Side
Symbol
I
(AV)
I
FSM
Characteristics
Maximum Average Forward Rectified Current
Non Repetitive Peak Forward Surge Current
Per Diode Sinusoidal (JEDEC METHOD)
Maximum Forward Voltage
Pulse Width=300us
Duty Cycle
Maximum DC Reverse Current
At Rated DC Blocking Voltage
I
F
=8A
I
F
=8A
I
F
=16A
I
F
=16A
@T
C
=120
o
C
T
P
=10ms
T
P
=8.3ms
@T
J
=25
o
C
@T
J
=125
o
C
@T
J
=25
o
C
@T
J
=125
o
C
@T
J
=25
o
C
@T
J
=100
o
C
Maximum Ratings
16
80
90
1.1
1.0
1.25
1.20
5
100
80
30
3.0
-55 to +150
Unit
A
A
V
F
V
I
R
C
J
T
RR
R
OJC
uA
pF
ns
o
Typical Junction Capacitance Per Element (Note 1)
Maximum Reverse Recovery Time (Note 2)
Typical Thermal Resistance
C/W
o
T
J
, T
STG
Operating And Storage Temperature Range
NOTES: 1. Measured at 1.0MHz And Applied Reverse Voltage Of 4.0V DC.
2. Reverse Recovery Test Conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A.
C
FEATURES
* Glass passivated chip
* Superfast switching time for high efficiency
* Low forward voltage drop and high current capability
* Low reverse leakage current
* High surge capacity
MECHANICAL DATA
* Case: TO-263 molded plastic
* Polarity: As marked on the body
* Weight: 0.08 ounces, 2.24 grams
* Mounting position: Any
SIRECTIFIER [ SIRECTIFIER SEMICONDUCTORS ]
