SUR2x100-12
Ultra Fast Recovery Epitaxial Diodes
Dimensions SOT-227(ISOTOP)
Dim.
A
B
C
D
E
F
G
H
J
K
L
M
N
O
P
Q
Millimeter
Min.
Max.
31.50
7.80
4.09
4.09
4.09
14.91
30.12
37.80
11.68
8.92
0.76
12.60
25.15
1.98
4.95
26.54
3.94
4.72
24.59
-0.05
3.30
0.780
31.88
8.20
4.29
4.29
4.29
15.11
30.30
38.20
12.22
9.60
0.84
12.85
25.42
2.13
5.97
26.90
4.42
4.85
25.07
0.1
4.57
0.830
Inches
Min.
Max.
1.240
0.307
0.161
0.161
0.161
0.587
1.186
1.489
0.460
0.351
0.030
0.496
0.990
0.078
0.195
1.045
0.155
0.186
0.968
-0.002
0.130
19.81
1.255
0.323
0.169
0.169
0.169
0.595
1.193
1.505
0.481
0.378
0.033
0.506
1.001
0.084
0.235
1.059
0.174
0.191
0.987
0.004
0.180
21.08
SUR2x100-12
V
RSM
V
1200
V
RRM
V
1200
R
S
T
U
V
W
Symbol
I
FRMS
I
FAVM
I
FRM
Test Conditions
T
VJ
=T
VJM
T
C
=50
o
C; rectangular, d=0.5
t
p
<10us; rep. rating, pulse width limited by T
VJM
T
VJ
=45
o
C
t=10ms (50Hz), sine
t=8.3ms (60Hz), sine
t=10ms(50Hz), sine
t=8.3ms(60Hz), sine
t=10ms (50Hz), sine
t=8.3ms (60Hz), sine
t=10ms(50Hz), sine
t=8.3ms(60Hz), sine
Maximum Ratings
130
91
TBD
900
970
810
870
4100
4000
3300
3200
-40...+150
150
-40...+150
Unit
A
I
FSM
T
VJ
=150
o
C
T
VJ
=45
o
C
A
It
2
T
VJ
=150 C
o
A
2
s
T
VJ
T
VJM
T
stg
P
tot
V
ISOL
M
d
Weight
T
C
=25
o
C
50/60Hz, RMS
_
I
ISOL
<1mA
Mounting torque
Terminal connection torque (M4)
o
C
250
2500
1.5/13
1.5/13
30
W
V~
Nm/lb.in.
g
SIRECTIFIER [ SIRECTIFIER SEMICONDUCTORS ]
