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S29GL128N11TAIV10 参数 Datasheet PDF下载

S29GL128N11TAIV10图片预览
型号: S29GL128N11TAIV10
PDF下载: 下载PDF文件 查看货源
内容描述: 3.0伏只页面模式闪存具有110纳米MirrorBit⑩工艺技术 [3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology]
分类和应用: 闪存
文件页数/大小: 100 页 / 2678 K
品牌: SPANSION [ SPANSION ]
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D a t a S h e e t  
Table 19. Power-Up Sequence Timings  
Parameter  
Description  
Speed  
Unit  
Reset Low Time from Rising Edge of V (or last Reset pulse) to Rising Edge  
CC  
of RESET#  
t
Min  
35  
µs  
VCS  
Reset Low Time from Rising Edge of V (or last Reset pulse) to Rising Edge  
IO  
t
Min  
35  
µs  
ns  
VIOS  
of RESET#  
t
Reset High Time Before Read  
Max  
200  
RH  
Notes:  
1.  
V
< V + 200 mV.  
IO  
CC  
2.  
V
and V ramp must be in sync during power up. If RESET# is not stable for 35 µs, the following conditions may occur: the device does  
IO  
CC  
not permit any read and write operations, valid read operations return FFh, and a hardware reset is required.  
3. Maximum V power up current is 20 mA (RESET# =V ).  
CC  
IL  
Vcc_min  
Vio_min  
VCC  
VIO  
tRH  
CE#  
tVIOS  
tVCS  
RESET#  
Figure 22. Power-On Reset Timings  
S29GL-N_00_B3 October 13, 2006  
S29GL-N MirrorBit™ Flash Family  
91