S29GL-N
MirrorBit™ Flash Family
S29GL512N, S29GL256N, S29GL128N
512 Megabit, 256 Megabit, and 128 Megabit,
3.0 Volt-only Page Mode Flash Memory featuring
110 nm MirrorBit™ Process Technology
Data Sheet
Distinctive Characteristics
Architectural Advantages
Single power supply operation
— 3 volt read, erase, and program operations
Enhanced VersatileI/O™ control
— All input levels (address, control, and DQ input levels)
and outputs are determined by voltage on V
IO
input.
V
IO
range is 1.65 to V
CC
Manufactured on 110 nm MirrorBit process
technology
Secured Silicon Sector region
— 128-word/256-byte sector for permanent, secure
identification through an 8-word/16-byte random
Electronic Serial Number, accessible through a
command sequence
— May be programmed and locked at the factory or by
the customer
Flexible sector architecture
— S29GL512N: Five hundred twelve 64 Kword (128
Kbyte) sectors
— S29GL256N: Two hundred fifty-six 64 Kword (128
Kbyte) sectors
— S29GL128N: One hundred twenty-eight 64 Kword
(128 Kbyte) sectors
Compatibility with JEDEC standards
— Provides pinout and software compatibility for
single-power supply flash, and superior inadvertent
write protection
100,000 erase cycles per sector typical
20-year data retention typical
512 Mb
Package options
— 56-pin TSOP
— 64-ball Fortified BGA
Software & Hardware Features
Software features
— Program Suspend and Resume: read other sectors
before programming operation is completed
— Erase Suspend and Resume: read/program other
sectors before an erase operation is completed
— Data# polling and toggle bits provide status
— Unlock Bypass Program command reduces overall
multiple-word programming time
— CFI (Common Flash Interface) compliant: allows host
system to identify and accommodate multiple flash
devices
Hardware features
— Advanced Sector Protection
— WP#/ACC input accelerates programming time
(when high voltage is applied) for greater throughput
during system production. Protects first or last sector
regardless of sector protection settings
— Hardware reset input (RESET#) resets device
— Ready/Busy# output (RY/BY#) detects program or
erase cycle completion
Product Availability Table
Density
Init. Access
110 ns
100 ns
110 ns
256 Mb
100 ns
90 ns
110 ns
128 Mb
100 ns
90 ns
V
CC
Full
Full
Full
Full
Regulated
Full
Full
Regulated
Availability
Now
Now
Now
Now
Now
Now
Now
Now
Performance Characteristics
High performance
90 ns access time (S29GL128N, S29GL256N)
100 ns (S29GL512N)
8-word/16-byte page read buffer
25 ns page read times
16-word/32-byte write buffer reduces overall
programming time for multiple-word updates
Low power consumption (typical values at 3.0 V, 5
MHz)
— 25 mA typical active read current;
— 50 mA typical erase/program current
— 1 µA typical standby mode current
—
—
—
—
—
Publication Number
S29GL-N_00
Revision
B
Amendment
3
Issue Date
October 13, 2006
SPANSION [ SPANSION ]
