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S29GL128N90FFIV12 参数 Datasheet PDF下载

S29GL128N90FFIV12图片预览
型号: S29GL128N90FFIV12
PDF下载: 下载PDF文件 查看货源
内容描述: 3.0伏只页面模式闪存具有110纳米MirrorBit⑩工艺技术 [3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology]
分类和应用: 闪存
文件页数/大小: 100 页 / 2678 K
品牌: SPANSION [ SPANSION ]
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D a t a
S h e e t
Table 10.
Addresses (x16)
27h
28h
29h
2Ah
2Bh
2Ch
2Dh
2Eh
2Fh
30h
31h
32h
33h
34h
35h
36h
37h
38h
39h
3Ah
3Bh
3Ch
Addresses (x8)
4Eh
50h
52h
54h
56h
58h
5Ah
5Ch
5Eh
60h
62h
64h
66h
68h
6Ah
6Ch
6Eh
70h
72h
74h
76h
78h
Data
001Ah
0019h
0018h
0002h
0000h
0005h
0000h
0001h
00xxh
000xh
0000h
000xh
0000h
0000h
0000h
0000h
0000h
0000h
0000h
0000h
0000h
0000h
0000h
0000h
Device Geometry Definition
Description
Device Size = 2
N
byte
1A = 512 Mb, 19 = 256 Mb, 18 = 128 Mb
Flash Device Interface description (refer to CFI publication 100)
Max. number of byte in multi-byte write = 2
N
(00h = not supported)
Number of Erase Block Regions within device (01h = uniform device,
02h = boot device)
Erase Block Region 1 Information
(refer to the CFI specification or CFI publication 100)
00FFh, 001h, 0000h, 0002h = 512 Mb
00FFh, 0000h, 0000h, 0002h = 256 Mb
007Fh, 0000h, 0000h, 0002h = 128 Mb
Erase Block Region 2 Information (refer to CFI publication 100)
Erase Block Region 3 Information (refer to CFI publication 100)
Erase Block Region 4 Information (refer to CFI publication 100)
48
S29GL-N MirrorBit™ Flash Family
S29GL-N_00_B3 October 13, 2006