SSM40T03GH,J
f=1.0MHz
12
1000
I D =18A
C iss
9
V
V
V
DS =10V
DS =15V
DS =20V
C oss
C rss
6
100
3
10
0
1
8
15
22
29
0
3
6
9
12
V DS ,Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
Duty factor = 0.5
0.2
100us
1ms
0.1
10
0.1
0.05
PDM
0.02
t
0.01
T
T C =25°C
Single Pulse
Duty Factor = t/T
10ms
100ms
DC
Single Pulse
Peak Tj = PDM x Rthjc + TC
1
0.01
0.1
1
10
100
0.00001
0.0001
0.001
0.01
0.1
1
t , Pulse Width (s)
V DS ,Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
VDS
VG
90%
QG
4.5V
QGD
QGS
10%
VGS
td(off)
tr
td(on)
tf
Q
Charge
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
2/16/2005 Rev.2.1
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