SFF6661/39
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, CA 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
Electrical Characteristics3/
Symbol Min Typ Max Units
Drain to Source Breakdown Voltage
VDS = 0V, ID = 1.0μA
BVDSS
90
125
––
V
VDS = VGS, ID = 1.0mA
DS = VGS, ID = 1.0mA, TA= -55°C
VDS = VGS, ID = 1.0mA, TA= 125°C
0.8
––
0.3
1.6
1.8
1.3
2
2.5
––
Gate Threshold Voltage
Gate to Body Leakage
V
VGS(th)
V
VDS = 0V, VGS = ±20V
VDS = 0V, VGS = ±20V, TA = 125°C
––
––
––
––
±100
±500
IGSS
nA
V
DS = 72V, VGS = 0V
––
––
––
––
1
100
Zero Gate Voltage Drain Current
On-State Drain Current*
IDSS
μA
V
DS = 72V, VGS = 0V, TA = 125°C
VDS = 10V, VGS = 10V
ID(on)
––
1.8
––
mA
VGS = 5V, ID = 0.3A
––
––
––
3.8
3.6
6.7
5.3
4
7.5
Drain to Source On State Resistance*
VGS = 10V, ID = 1A
RDS(on)
Ω
V
GS = 10V, ID = 1A, TA=125°C
Forward Transconductance*
Diode Forward Voltage
V
DS = 7.5V, ID = 0.475A
gfs
170
0.7
340
0.9
––
mS
V
IS = 0.86A, VGS = 0V
VSD
1.4
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Drain-Source Capacitance
Ciss
Coss
Crss
Cds
––
––
––
––
35
15
2
50
40
10
––
V
GS = 0V
VDS = 25V
pF
f = 1 MHz
30
Turn-On Time
Turn-Off Time
V
DD = 25V, RL = 23Ω
t (on)
t (off)
––
––
6
8
10
10
nsec
ID = 1A VGEN = 10V, RG = 23Ω
PIN ASSIGNMENT (Standard)
CASE OUTLINE: TO-39 (/39)
Package
Drain Source Gate
Pin 3 Pin 1 Pin 2
TO-39(/39)
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: FT0041B
DOC