2 Mbit SPI Serial Flash
SST25LF020A
SST25LF020A / 040A2Mb / 4Mb Serial Peripheral Interface (SPI) flash memory
Data Sheet
FEATURES:
• Single 3.0-3.6V Read and Write Operations
• Serial Interface Architecture
– SPI Compatible: Mode 0 and Mode 3
• 33 MHz Max Clock Frequency
• Superior Reliability
– Endurance: 100,000 Cycles (typical)
– Greater than 100 years Data Retention
• Low Power Consumption:
– Active Read Current: 7 mA (typical)
– Standby Current: 8 µA (typical)
• Flexible Erase Capability
– Uniform 4 KByte sectors
– Uniform 32 KByte overlay blocks
• Fast Erase and Byte-Program:
– Chip-Erase Time: 70 ms (typical)
– Sector- or Block-Erase Time: 18 ms (typical)
– Byte-Program Time: 14 µs (typical)
• Auto Address Increment (AAI) Programming
– Decrease total chip programming time over
Byte-Program operations
• End-of-Write Detection
– Software Status
• Hold Pin (HOLD#)
– Suspends a serial sequence to the memory
without deselecting the device
• Write Protection (WP#)
– Enables/Disables the Lock-Down function of the
status register
• Software Write Protection
– Write protection through Block-Protection bits in
status register
• Temperature Range
– Commercial: 0°C to +70°C
– Industrial: -40°C to +85°C
– Extended: -20°C to +85°C
• Packages Available
– 8-lead SOIC 150 mil body width
for SST25LF020A
– 8-contact WSON (5mm x 6mm)
• All non-Pb (lead-free) devices are RoHS compliant
PRODUCT DESCRIPTION
SST’s serial flash family features a four-wire, SPI-com-
patible interface that allows for a low pin-count package
occupying less board space and ultimately lowering total
system costs. SST25LF020A SPI serial flash memories
are manufactured with SST’s proprietary, high perfor-
mance CMOS SuperFlash technology. The split-gate cell
design and thick-oxide tunneling injector attain better reli-
ability and manufacturability compared with alternate
approaches.
The SST25LF020A devices significantly improve perfor-
mance, while lowering power consumption. The total
energy consumed is a function of the applied voltage, cur-
rent, and time of application. Since for any given voltage
range, the SuperFlash technology uses less current to
program and has a shorter erase time, the total energy
consumed during any Erase or Program operation is less
than alternative flash memory technologies. The
SST25LF020A devices operate with a single 3.0-3.6V
power supply.
The SST25LF020A devices are offered in an 8-lead SOIC
150 mil body width (SA) package, and in an 8-contact
WSON package. See Figure 2 for the pin assignments.
©2010 Silicon Storage Technology, Inc.
S71242-07-000
01/10
1
The SST logo and SuperFlash are registered Trademarks of Silicon Storage Technology, Inc.
These specifications are subject to change without notice.
SST [ SILICON STORAGE TECHNOLOGY, INC ]
