STN4488L
N Channel Enhancement Mode MOSFET
20.0A
ELECTRICAL CHARACTERISTICS
( Ta = 25
℃
Unless otherwise noted )
Parameter
Static
Drain-Source Breakdown
Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain
Current
On-State Drain Current
Symbol
Condition
Min
Typ Max Unit
V
(BR)DSS
V
GS(th)
I
GSS
I
DSS
V
GS
=0V,I
D
=250uA
V
DS
=V
GS
,I
D
=250uA
V
DS
=0V,V
GS
=
±
20V
V
DS
=30V,V
GS
=0V
T
J
=55
℃
30
1.0
2.5
±
10
1
5
80
3.8
5.3
5.2
72
1.0
4.6
6.5
6.4
V
V
nA
uA
A
I
D(on)
V
DS
=5V,V
GS
=10V
V
GS
=
10V, I
D
=20A
Drain-source On-Resistance
R
DS(on)
T
J
=125°C
m
Ω
V
GS
=
4.5V, I
D
=18A
Forward Tran Conductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse TransferCapacitance
Turn-On Time
Q
g
Q
gs
Q
gd
Ciss
Coss
Crss
t
d(on)
tr
g
fs
V
SD
V
DS
=10V,I
D
=20A
I
S
=8.0A,V
GS
=0V
S
V
V
DS
=15V,V
GS
=10V
I
D
=20A
84
12
21
112
nC
5450 6800
V
DS
=15V,V
GS
=0V
f=1MHz
760
540
13
V
DS
=15V,R
L
=0.75
Ω
I
D
=1A,V
G
=10V
R
G
=3.0
Ω
9.8
49
16
nS
pF
t
d(off)
Turn-Off Time
tf
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2007, Stanson Corp.
STN4488L 2009. V1
STANSON [ STANSON TECHNOLOGY ]
