2N2218-2N2219
2N2221-2N2222
HIGH-SPEED SWITCHES
DESCRIPTION
The 2N2218, 2N2219, 2N2221 and 2N2222 are sili-
con planar epitaxial NPN transistors in Jedec
TO-39 (for 2N2218 and 2N2219) and in Jedec
TO-18 (for 2N2221 and 2N2222) metal cases. They
are designed for high-speed switching applications
at collector currents up to 500 mA, and feature use-
ful current gain over a wide range of collector cur-
rent, low leakage currents and low saturation volt-
ages.
2N2218/2N2219 approved to CECC 50002-
100, 2N2221/2N2222 approved to CECC
50002-101 available on request.
TO-39
TO-18
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
t o t
Parameter
Collector-base Voltage (I
E
= 0)
Collector-emitter Voltage (I
B
= 0)
Emitter-base Voltage (I
C
= 0)
Collector Current
Total Power Dissipation at T
amb
≤
25
°C
for
2N2 21 8
and
for
2N2 22 1
and
at T
c as e
≤
25
°C
for
2N2 21 8
and
for
2N2 22 1
and
Storage Temperature
Junction Temperature
2 N22 19
2 N22 22
2 N22 19
2 N22 22
Value
60
30
5
0.8
0.8
0.5
3
1.8
– 65 to 200
175
Unit
V
V
V
A
W
W
W
W
°C
°C
1/5
T
st g
T
j
January 1989
STMICROELECTRONICS [ STMICROELECTRONICS ]
