2N2369
HIGH-FREQUENCY SATURATED SWITCH
DESCRIPTION
The 2N2369 is a silicon planar epitaxial NPN tran-
sistor in Jedec TO-18 metal case. It is designed spe-
cifically for high-speed saturated switching applica-
tions at current levels from 100
µA
to 100 mA.
TO-18
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CBO
V
CES
V
CEO
V
EBO
I
CM
P
t o t
Parameter
Collector-base Voltage (I
E
= 0)
Collector-emitter Voltage (V
BE
= 0)
Collector-emitter Voltage (I
B
= 0)
Emitter-base Voltage (I
C
= 0)
Collector Peak Current (t = 10
µs)
Total Power Dissipation at T
amb
≤
25
°C
at T
c as e
≤
25
°C
at T
c as e
≤
100
°C
Storage and Junction Temperature
Value
40
40
15
4.5
0.5
0.36
1.2
0.68
– 65 to 200
Unit
V
V
V
V
A
W
W
W
°C
T
s t g
, T
j
Products approve to CECC 50004-022/023 available on request.
d
January 1989
1/4
STMICROELECTRONICS [ STMICROELECTRONICS ]
