®
2N5415
2N5416
SILICON PNP TRANSISTORS
s
s
STMicroelectronics PREFERRED
SALESTYPES
PNP TRANSISTORS
DESCRIPTION
The 2N5415, 2N5416 are high voltage silicon
epitaxial planar PNP transistors in Jedec TO-39
metal case designed for use in consumer and
industrial line-operated applications.
These devices are particularly suited as drivers in
high-voltage low current inverters, switching and
series regulators.
TO-39
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
tot
P
tot
T
stg
Parameter
2N5415
Collector-Base Voltage (I
E
= 0)
Collector-Emitter Voltage (I
B
= 0)
Emitter-Base Voltage (I
C
= 0)
Collector Current
Base Current
Total Dissipation at T
c
≤
25 C
Total Dissipation at T
amb
≤
50
o
C
Storage Temperature
o
Value
2N5416
-350
-300
-6
-1
-0.5
10
1
-65 to 200
-200
-200
-4
Unit
V
V
V
A
A
W
W
o
C
December 2000
1/4
STMICROELECTRONICS [ STMICROELECTRONICS ]
