2SC5200
High power NPN epitaxial planar bipolar transistor
Preliminary data
Features
■
■
High breakdown voltage V
CEO
= 230 V
Typical f
T
= 30 MHz
Application
■
Audio power amplifier
Description
This device is a NPN transistor manufactured
using new BiT-LA (bipolar transistor for linear
amplifier) technology. The resulting transistor
shows good gain linearity behaviour.
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TO-264
Internal schematic diagram
Table 1.
Device summary
Order code
2SC5200
Marking
2SC5200
Package
TO-264
Packaging
Tube
September 2009
Doc ID 16310 Rev 1
1/8
8
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.