欢迎访问ic37.com |
会员登录 免费注册
发布采购

2SD882 参数 Datasheet PDF下载

2SD882图片预览
型号: 2SD882
PDF下载: 下载PDF文件 查看货源
内容描述: NPN型中功率晶体管 [NPN medium power transistor]
分类和应用: 晶体晶体管功率双极晶体管
文件页数/大小: 8 页 / 110 K
品牌: STMICROELECTRONICS [ STMICROELECTRONICS ]
 浏览型号2SD882的Datasheet PDF文件第1页浏览型号2SD882的Datasheet PDF文件第2页浏览型号2SD882的Datasheet PDF文件第4页浏览型号2SD882的Datasheet PDF文件第5页浏览型号2SD882的Datasheet PDF文件第6页浏览型号2SD882的Datasheet PDF文件第7页浏览型号2SD882的Datasheet PDF文件第8页  
2SD882
Electrical characteristics
2
Electrical characteristics
(T
CASE
= 25°C; unless otherwise specified)
Table 4.
Symbol
I
CES
I
CEO
I
EBO
V
(BR)CEO
(1)
Electrical characteristics
Parameter
Collector cut-off current
(V
BE
= 0)
Collector cut-off current
(I
B
= 0)
Emitter cut-off current
(I
C
= 0)
Test conditions
V
CE
= 60 V
V
CE
= 30 V
V
EB
= 5 V
Min.
Typ.
Max.
10
100
10
Unit
µA
µA
µA
Collector-emitter breakdown
voltage
I
C
= 10 mA
(I
B
= 0 )
Collector-base breakdown
voltage
(I
E
= 0 )
Emitter-base breakdown
voltage
(I
C
= 0 )
Collector-emitter saturation
voltage
Base-emitter saturation
voltage
I
C
= 100 µA
30
V
V
(BR)CBO
60
V
V
(BR)EBO
I
E
= 100 µA
I
C
= 1 A
I
C
= 2 A
I
C
= 3 A
I
C
= 2 A
I
C
= 100 mA
I
C
= 1 A
I
C
= 3 A
I
C
= 0.1 A
I
B
= 50 mA
I
B
= 100 mA
I
B
= 150 mA
I
B
= 100 mA
V
CE
= 2 V
V
CE
= 2 V
V
CE
= 2 V
V
CE
= 10 V
5
0.4
0.7
1.1
1.2
100
80
30
100
300
V
V
V
V
V
V
CE(sat)
(1)
V
BE(sat)
(1)
h
FE
f
T
DC current gain
Transition frequency
MHz
1. Pulsed duration = 300 ms, duty cycle
1.5%.
3/8