2STR1160
Low voltage fast-switching NPN power transistor
Features
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Very low collector-emitter saturation voltage
High current gain characteristic
Fast switching speed
Miniature SOT-23 plastic package for surface
mounting circuits
Description
The device in a NPN transistor manufactured
using new “PB-HCD” (Power Bipolar High Current
Density) technology. The resulting transistor
shows exceptional high gain performances
coupled with very low saturation voltage.
The complementary PNP is the 2STR2160.
SOT-23
Figure 1.
Internal schematic diagram
Applications
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LED
Battery charger
Motor and relay driver
Voltage regulation
Table 1.
Device summary
Marking
160
Package
SOT-23
Packing
Tape and reel
Order code
2STR1160
February 2008
Rev 1
1/11
11
STMICROELECTRONICS [ STMICROELECTRONICS ]
