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2STW1693 参数 Datasheet PDF下载

2STW1693图片预览
型号: 2STW1693
PDF下载: 下载PDF文件 查看货源
内容描述: 高功率PNP外延平面型双极晶体管 [High power PNP epitaxial planar bipolar transistor]
分类和应用: 晶体晶体管功率双极晶体管放大器局域网
文件页数/大小: 10 页 / 213 K
品牌: STMICROELECTRONICS [ STMICROELECTRONICS ]
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2STW1693
High power PNP epitaxial planar bipolar transistor
Features
High breakdown voltage V
CEO
= -80V
Complementary to 2STW4466
Typical f
t
= 20MHz
Fully characterized at 125
o
C
Applications
3
2
1
Audio power amplifier
TO-247
Description
The device is a PNP transistor manufactured in
low voltage planar technology using base island
layout. The resulting transistor shows good gain
linearity coupled with low V
CESAT
behaviour.
Recommended for 40W to 70W high fidelity audio
frequency amplifier output stage.
Figure 1.
Internal schematic diagram
Table 1.
Device summary
Marking
2STW1693
Package
TO-247
Packaging
Tube
Order code
2STW1693
October 2007
Rev 1
1/10
10