2STW1693
High power PNP epitaxial planar bipolar transistor
Features
■
■
■
■
High breakdown voltage V
CEO
= -80V
Complementary to 2STW4466
Typical f
t
= 20MHz
Fully characterized at 125
o
C
Applications
■
3
2
1
Audio power amplifier
TO-247
Description
The device is a PNP transistor manufactured in
low voltage planar technology using base island
layout. The resulting transistor shows good gain
linearity coupled with low V
CESAT
behaviour.
Recommended for 40W to 70W high fidelity audio
frequency amplifier output stage.
Figure 1.
Internal schematic diagram
Table 1.
Device summary
Marking
2STW1693
Package
TO-247
Packaging
Tube
Order code
2STW1693
October 2007
Rev 1
1/10
10