BC847B / BC847C
THERMAL DATA
R
thj-amb
•
Thermal Resistance Junction-Ambient
2
Max
500
o
C/W
•
Device mounted on a PCB area of 1 cm .
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unless otherwise specified)
Symbol
I
CBO
I
EBO
V
(BR)CBO
Parameter
Collector Cut-off
Current (I
E
= 0)
Emitter Cut-off Current
(I
C
= 0)
Collector-Base
Breakdown Voltage
(I
E
= 0)
Test Conditions
V
CB
= 30 V
V
CB
= 30 V
V
EB
= 5 V
I
C
= 10
µA
50
T
C
= 150 C
o
Min.
Typ.
Max.
15
5
100
Unit
nA
µA
nA
V
V
(BR)CEO
∗
Collector-Emitter
Breakdown Voltage
(I
B
= 0)
V
(BR)EBO
Emitter-Base
Breakdown Voltage
(I
C
= 0)
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter On
Voltage
DC Current Gain
I
C
= 2 mA
45
V
I
E
= 10
µA
6
V
V
CE(sat)
∗
V
BE(sat)
∗
V
BE(on)
∗
h
FE
∗
I
C
= 10 mA
I
C
= 100 mA
I
C
= 10 mA
I
C
= 100 mA
I
C
= 2 mA
I
C
= 10 mA
I
C
= 10
µA
for
BC847B
for
BC847C
I
C
= 2 mA
for
BC847B
for
BC847C
I
E
= 0
I
B
= 0.5 mA
I
B
= 5 mA
I
B
= 0.5 mA
I
B
= 5 mA
V
CE
= 5 V
V
CE
= 5 V
V
CE
= 5 V
0.58
0.09
0.2
0.7
0.9
0.66
0.25
0.6
V
V
V
V
0.7
0.77
V
V
150
270
V
CE
= 5 V
200
420
100
2.5
2
10
290
520
450
800
MHz
pF
dB
f
T
C
CBO
NF
Transition Frequency
Collector-Base
Capacitance
Noise Figure
I
C
= 10 mA V
CE
= 5 V f = 100MHz
V
CB
= 10 V
f = 1 MHz
V
CE
= 5 V I
C
= 0.2 mA f = 1KHz
∆f
= 200 Hz R
G
= 2 KΩ
∗
Pulsed: Pulse duration = 300
µs,
duty cycle
≤
2 %
2/4
STMICROELECTRONICS [ STMICROELECTRONICS ]
