®
BDW93C
BDW94B/BDW94C
COMPLEMENTARY SILICON POWER
DARLINGTON TRANSISTORS
s
s
s
STMicroelectronics PREFERRED
SALESTYPES
COMPLEMENTARY PNP - NPN DEVICES
INTEGRATED ANTIPARALLEL
COLLECTOR-EMITTER DIODE
APPLICATIONS
s
LINEAR AND SWITCHING INDUSTRIAL
EQUIPMENT
DESCRIPTION
The BDW93C is a silicon Epitaxial-Base NPN
power transistor in monolithic Darlington
configuration mounted in Jedec TO-220 plastic
package. It is intented for use in power linear and
switching applications.
The complementary PNP type is BDW94C.
Also BDW94B is a PNP type.
1
2
3
TO-220
INTERNAL SCHEMATIC DIAGRAM
R
1
Typ. = 10 KΩ
R
2
Typ. = 150
Ω
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
NPN
PNP
V
CBO
V
CEO
I
C
I
CM
I
B
P
tot
T
s tg
T
j
Collector-Base Voltage (I
E
= 0)
Collector-Emitter Voltage (I
B
= 0)
Collector Current
Collector Peak Current
Base Current
T otal Dissipation at T
c
≤
25
o
C
Storage Temperature
Max. Operating Junction Temperature
BDW94B
80
80
12
15
0.2
80
-65 to 150
150
Value
BDW93C
BDW94C
100
100
V
V
A
A
A
W
o
o
Un it
C
C
For PNP types voltage and current values are negative.
October 1999
1/6
STMICROELECTRONICS [ STMICROELECTRONICS ]
