®
BUZ11
N - CHANNEL 50V - 0.03Ω - 33A TO-220
STripFET™ MOSFET
T YPE
BUZ 11
s
s
s
s
s
V
DSS
50 V
R
DS(o n)
< 0.04
Ω
I
D
33 A
TYPICAL R
DS(on)
= 0.03
Ω
AVALANCHE RUGGED TECHNOLOGY
100% AVALANCHE TESTED
HIGH CURRENT CAPABILITY
175
o
C OPERATING TEMPERATURE
3
1
2
APPLICATIONS
s
HIGH CURRENT, HIGH SPEED SWITCHING
s
SOLENOID AND RELAY DRIVERS
s
REGULATORS
s
DC-DC & DC-AC CONVERTERS
s
MOTOR CONTROL, AUDIO AMPLIFIERS
s
AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
DGR
V
GS
I
D
I
DM
P
tot
T
s tg
T
j
Parameter
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 kΩ)
G ate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (pulsed)
T otal Dissipation at T
c
= 25
o
C
Storage Temperature
Max. Operating Junction Temperature
DIN HUMIDITY CAT EGORY (DIN 40040)
IEC CLIMAT IC CAT EG ORY (DIN IEC 68-1)
First digit of the datecode being Z or K identifies silicon characterized in this datasheet.
Value
50
50
±
20
33
134
90
-65 to 175
175
E
55/150/56
Un it
V
V
V
A
A
W
o
o
C
C
July 1999
1/8
STMICROELECTRONICS [ STMICROELECTRONICS ]
