®
BYW51/F/G/FP/R-200
HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES
MAIN PRODUCT CHARACTERISTICS
I
F(AV)
V
RRM
Tj (max)
V
F
(max)
trr (max)
2 x 10 A
200 V
150 °C
0.85 V
25 ns
K
A1
A2
A1
K
A2
FEATURES AND BENEFITS
SUITED FOR SMPS
VERY LOW FORWARD LOSSES
NEGLIGIBLE SWITCHING LOSSES
HIGH SURGE CURRENT CAPABILITY
INSULATED PACKAGES (ISOWATT220AB /
TO-220FP) :
Insulation voltage = 2000 V DC
Capacitance = 12 pF
s
s
s
s
s
TO-220FPAB
BYW51FP-200
K
K
A1
A2
TO-220AB
BYW51-200
A2
A1
D PAK
BYW51G-200
A2
A1
K
2
DESCRIPTION
Dual center tap rectifier suited for Switched Mode
Power Supplies and high frequency DC to DC
converters.
Packaged in TO-220AB, ISOWATT220AB,
TO-220FP, D
2
PAK or I
2
PAK, this device is
intended for use in low voltage, high frequency
inverters, free wheeling and polarity protection
applications.
ABSOLUTE RATINGS
(limiting values, per diode)
Symbol
V
RRM
I
F(RMS)
I
F(AV)
RMS forward current
Parameter
Repetitive peak reverse voltage
ISOWATT220AB
BYW51F-200
A2
K
A1
I
2
PAK
BYW51R-200
Value
200
20
Unit
V
A
A
Average forward current TO-220AB / D PAK Tc=120°C Per diode
δ
= 0.5
I
2
PAK
Per device
ISOWATT220AB
TO-220FPAB
Tc=95°C
Tc=85°C
Per diode
Per device
Per diode
Per device
tp=10ms sinusoidal
2
10
20
10
20
10
20
100
- 65 to + 150
150
I
FSM
Tstg
Tj
Surge non repetitive forward current
Storage temperature range
Maximum operating junction temperature
A
°C
°C
1/9
August 2002 - Ed: 3E
STMICROELECTRONICS [ STMICROELECTRONICS ]
