ESM4045DV
THERMAL DATA
R
thj-case
R
thj-case
R
thc-h
Thermal Resistance Junction-case (transistor)
Thermal Resistance Junction-case (diode)
Thermal Resistance Case-heatsink With Conductive
Grease Applied
Max
Max
Max
0.83
1.5
0.05
o
o
o
C/W
C/W
C/W
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unless otherwise specified)
Symbol
I
CER
#
I
CEV
#
I
EBO
#
Parameter
Collector Cut-off
Current (R
BE
= 5
Ω)
Collector Cut-off
Current (V
BE
= -5)
Emitter Cut-off Current
(I
C
= 0)
Test Conditions
V
CE
= V
CEV
V
CE
= V
CEV
V
CE
= V
CEV
V
CE
= V
CEV
V
EB
= 5 V
I
C
= 0.2 A
L = 25 mH
V
clamp
= 450 V
I
C
= 35 A
I
C
I
C
I
C
I
C
=
=
=
=
25
25
35
35
A
A
A
A
V
CE
= 5 V
I
B
I
B
I
B
I
B
=
=
=
=
0.5 A
0.5 A T
j
= 100
o
C
2A
2A
T
j
= 100
o
C
T
j
= 100
o
C
200
450
T
j
= 100 C
T
j
= 100 C
o
o
Min.
Typ.
Max.
1.5
20
1
13
1
Unit
mA
mA
mA
mA
mA
V
V
CEO(SUS)
* Collector-Emitter
Sustaining Voltage
(I
B
= 0)
h
FE
∗
V
CE(sat)
∗
DC Current Gain
Collector-Emitter
Saturation Voltage
220
1.15
1.3
1.4
1.5
2.3
2.3
250
4.5
2.5
3.2
0.25
0.75
450
8
4.5
5
0.5
1.5
2
2
3
V
V
V
V
V
V
A/µs
V
V
µs
µs
µs
V
V
BE(sat)
∗
di
C
/dt
Base-Emitter
Saturation Voltage
Rate of Rise of
On-state Collector
I
C
= 35 A
I
C
= 35 A
I
B
= 2 A
I
B
= 2 A
V
CC
= 300 V
I
B1
= 0.75 A
V
CC
= 300 V
I
B1
= 0.75 A
V
CC
= 300 V
I
B1
= 0.75 A
I
C
= 25A
V
BB
= -5 V
V
clamp
= 450 V
L = 0.1 mH
I
CWoff
= 42 A
V
BB
= -5 V
L = 0.06 mH
T
j
= 125
o
C
I
F
= 35 A
R
C
= 0
t
p
= 3
µs
T
j
= 100
o
C
R
C
= 12
Ω
T
j
= 100
o
C
R
C
= 12
Ω
T
j
= 100
o
C
V
CC
= 50 V
R
BB
= 0.6
Ω
I
B1
= 0.5 A
T
j
= 100
o
C
I
B1
= 2 A
V
CC
= 50 V
R
BB
= 0.6
Ω
T
j
= 100
o
C
V
CE
(3
µs)
Collector-Emitter
Dynamic Voltage
V
CE
(5
µs)
Collector-Emitter
Dynamic Voltage
t
s
t
f
t
c
V
CEW
Storage Time
Fall Time
Cross-over Time
Maximum Collector
Emitter Voltage
Without Snubber
Diode Forward Voltage
Reverse Recovery
Current
V
F
∗
I
RM
1.5
20
1.85
24
V
A
V
CC
= 200 V
I
F
= 35 A
di
F
/dt = -200 A/µs L < 0.05
µH
T
j
= 100
o
C
∗
Pulsed: Pulse duration = 300
µs,
duty cycle 1.5 %
To evaluate the conduction losses of the diode use the following equations:
P = 1.5 I
F(AV)
+ 0.001 I
2F(RMS)
V
F
= 1.5 + 0.001 I
F
# See test circuits in databook introduction
2/8
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