IRF620
IRF620FI
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTORS
TYPE
IRF620
IRF620FI
s
s
s
s
V
DSS
200 V
200 V
R
DS( on)
< 0.8
Ω
< 0.8
Ω
I
D
6A
4A
TYPICAL R
DS(on)
= 0.55
Ω
AVALANCHE RUGGED TECHNOLOGY
100% AVALANCHE TESTED
REPETITIVE AVALANCHE DATA AT 100
o
C
3
1
2
1
3
2
APPLICATIONS
s
HIGH CURRENT, HIGH SPEED SWITCHING
s
UNINTERRUPTIBLE POWER SUPPLY (UPS)
s
MOTOR CONTROL, AUDIO AMPLIFIERS
s
INDUSTRIAL ACTUATORS
s
DC-DC & DC-AC CONVERTERS FOR
TELECOM, INDUSTRIAL AND CONSUMER
ENVIRONMENT
TO-220
ISOWATT220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
V
D S
V
DG R
V
GS
I
D
I
D
I
D M
(•)
P
tot
V
ISO
T
stg
T
j
Parameter
IRF620
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 kΩ)
Gate-source Voltage
Drain Current (cont.) at T
c
= 25
o
C
Drain Current (cont.) at T
c
= 100
o
C
Drain Current (pulsed)
Total Dissipation at T
c
= 25
o
C
Derating Factor
Insulation Withstand Voltage (DC)
Storage Temperature
Max. Operating Junction Temperature
6
4
24
70
0.56
-65 to 150
150
200
200
±
20
4
2
24
30
0.24
2000
Value
IRF620FI
V
V
V
A
A
A
W
W/
o
C
V
o
o
Unit
C
C
(•) Pulse width limited by safe operating area
November 1996
1/9
STMICROELECTRONICS [ STMICROELECTRONICS ]
