IRF840
ELECTRICAL CHARACTERISTICS
(continued)
SWITCHING ON
Symb ol
t
d(on)
t
r
Q
g
Q
gs
Q
gd
Parameter
Turn-on Time
Rise Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Test Cond ition s
V
DD
= 250 V I
D
= 4.3 A
V
GS
= 10 V
R
G
= 4.7
Ω
(see test circuit, figure 3)
V
DD
= 400 V
I
D
= 8.0 A V
GS
= 10 V
Min.
Typ .
19
11
39
10.6
13.7
50
Max.
Un it
ns
ns
nC
nC
nC
SWITCHING OFF
Symb ol
t
r(Vof f)
t
f
t
c
Parameter
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Cond ition s
V
DD
= 400 V I
D
= 8 A
R
G
= 4.7
Ω
V
GS
= 10 V
(see test circuit, figure 5)
Min.
Typ .
11.5
11
20
Max.
Un it
ns
ns
ns
SOURCE DRAIN DIODE
Symb ol
I
SD
I
SDM
(•)
V
SD
(∗)
t
rr
Q
rr
I
RRM
Parameter
Source-drain Current
Source-drain Current
(pulsed)
Forward On Voltage
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
I
SD
= 8.0 A
V
GS
= 0
420
3.5
16.5
Test Cond ition s
Min.
Typ .
Max.
8.0
32
1.6
Un it
A
A
V
ns
µC
A
I
SD
= 8.0 A di/dt = 100 A/µs
o
T
j
= 150 C
V
DD
= 100 V
(see test circuit, figure 5)
(∗) Pulsed: Pulse duration = 300
µs,
duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Safe Operating Area
Thermal Impedance
3/8
STMICROELECTRONICS [ STMICROELECTRONICS ]
